Semiconductor device with embedded sigma-shaped structure and method for preparing the same

ABSTRACT

The present disclosure provides a semiconductor device and a preparation method thereof. The semiconductor device includes a semiconductor substrate, a semiconductor fin and a filled trench. The semiconductor fin extends upwards from the semiconductor substrate. The filled trench is formed in the semiconductor fin and includes a first sigma portion, a second sigma portion and a middle portion. The first sigma portion is partially filled by a semiconductor buffer region, and an unfilled part of the first sigma portion is filled by a doped semiconductor region grown on the semiconductor buffer region. The second sigma portion is filled by the semiconductor buffer region. The middle portion connects the first sigma portion to the second sigma portion, and the middle portion is filled by the semiconductor buffer region.

TECHNICAL FIELD

The present disclosure relates to a semiconductor device and method forpreparing the same, and more particularly, to a semiconductor devicewith an embedded sigma-shaped structure and a method for preparing thesame.

DISCUSSION OF THE BACKGROUND

In modern electronic devices, integrated circuits (ICs) serve acontinuously expanding range of applications. In particular, demand forincreasing mobility of electronic devices that exhibit high performanceand low energy consumption drives development to ever more compactdevices having features with sizes ranging down into the low submicronscale. Current semiconductor technologies are capable of producingstructures with dimensions in the magnitude of 10 nm. Because an ICrepresents a set of electronic circuit elements integrated on asemiconductor material, ICs can be made much smaller than discreetcircuits composed of independent circuit components. Typically,present-day integrated circuits involve millions of single circuitelements formed on a semiconductor substrate.

In order to enhance channel strain, embedding “sigma-shaped” structuresin source/drain regions of a FinFET has proven to be an effectiveapproach. In one known approach, gate structures are formed over asemiconductor fin, and a sigma-shaped source/drain structure is embeddedin a sigma cavity between the gate structures. The sigma-shapedsource/drain structure allows the source/drain structure to bepositioned in close proximity to the transistor channel region andtherefore maximizes stress inside the transistor channel region.However, for FinFETs, the subsequent drive-in anneal performed on suchsigma-shaped source/drain structure results in a non-uniform junctionprofile, along the fin height direction, causing inconsistency in gatelength within each semiconductor fin. Therefore, an embeddedsource/drain structure and process that provide a uniform source/drainjunction profile are needed.

This Discussion of the Background section is provided for backgroundinformation only. The statements in this Discussion of the Backgroundare not an admission that the subject matter disclosed in this sectionconstitutes prior art to the present disclosure, and no part of thisDiscussion of the Background section may be used as an admission thatany part of this application, including this Discussion of theBackground section, constitutes prior art to the present disclosure.

SUMMARY

One aspect of the present invention provides a semiconductor deviceincluding a semiconductor substrate, a semiconductor fin and a filledtrench. The semiconductor fin extends upwards from the semiconductorsubstrate. The filled trench is formed in the semiconductor fin andincludes a first sigma portion, a second sigma portion and a middleportion. The first sigma portion is partially filled by a semiconductorbuffer region, and an unfilled part of the first sigma portion is filledby a doped semiconductor region grown on the semiconductor bufferregion. The second sigma portion is filled by the semiconductor bufferregion. The middle portion connects the first sigma portion to thesecond sigma portion, and the middle portion is filled by thesemiconductor buffer region.

In some embodiments, the semiconductor device further comprises a gatestructure formed over the semiconductor fin, wherein the gate structureincludes a gate stack straddling a channel portion of the semiconductorfin and a gate spacer present on sidewalls of the gate stack.

In some embodiments, the first sigma portion includes a horizontal tipregion extending beneath the gate spacer and a bottom region extendingtoward the semiconductor substrate.

In some embodiments, the semiconductor buffer region fills thehorizontal tip region and the bottom region of the first sigma portion.

In some embodiments, the filled trench has sidewalls verticallycoincident with outer sidewalls of the gate spacer.

In some embodiments, the second sigma portion has a depth greater thanthat of the first sigma portion.

Another aspect of the present invention provides a method for preparinga semiconductor device. The method includes steps of providing asemiconductor substrate; forming a trench in the semiconductorsubstrate, wherein the trench includes a first sigma portion, a secondsigma portion and a middle portion connecting the first and second sigmaportions; epitaxially growing a semiconductor buffer region in thetrench, wherein the semiconductor buffer region fills the second sigmaportion, the middle portion and a part of the first sigma portion; andepitaxially growing a doped semiconductor region on the semiconductorbuffer region, wherein the doped semiconductor region fills an unfilledpart of the first sigma portion.

In some embodiments, the method further comprises: forming a gatestructure over a semiconductor fin that extends upwards from thesemiconductor substrate, wherein the gate structure comprises a gatestack straddling a channel portion of the semiconductor fin and a gatespacer present on sidewalls of the gate stack; and forming a horizontaltip region extending beneath the gate spacer and a bottom regionextending toward the semiconductor substrate portion in the first sigmaportion.

In some embodiments, forming the trench further comprises: forming aninitial cavity by performing an anisotropic etch to remove a portion ofthe semiconductor fin located on each side of the gate structure,wherein the initial cavity has a sidewall vertically coincident with anouter sidewall of the gate spacer; and forming an oxide collar on amiddle portion of sidewalls of the initial cavity.

In some embodiments, forming the trench further comprises performing acrystallographic anisotropic etch to form the first sigma portion abovethe oxide collar and the second sigma portion below the oxide collar,wherein the first and second sigma portions have faceted surfacesoriented along (111).

In some embodiments, forming the trench further comprises removing theoxide collar from the middle portion of the sidewalls of the initialcavity, such that the middle portion of the trench connects the firstsigma portion and the second sigma portion.

In some embodiments, the crystallographic anisotropic etch uses etchantincluding at least one of tetramethylammonium hydroxide (TMAH), ammoniumhydroxide and potassium hydroxide.

In some embodiments, the etchant etches (001) and (110) crystallographicplanes faster than (111) crystallographic planes.

Another aspect of the present invention provides a method for preparinga semiconductor device. The method includes steps of providing asemiconductor substrate; forming an initial cavity by performing ananisotropic etch to remove a portion of a semiconductor fin located oneach side of a gate structure; forming an oxide collar on a middleportion of sidewalls of the initial cavity; performing acrystallographic anisotropic etch to form a first sigma portion abovethe oxide collar and a second sigma portion below the oxide collar; andremoving the oxide collar from the middle portion of the sidewalls ofthe initial cavity so as to obtain a trench including a first sigmaportion, a second sigma portion and a middle portion connecting thefirst sigma portion and the second sigma portion.

In some embodiments, the method further comprises: forming a gatestructure over a semiconductor fin that extends upwards from thesemiconductor substrate, wherein the gate structure comprises a gatestack straddling a channel. portion of the semiconductor fin and a gatespacer present on sidewalls of the gate stack; and forming a horizontaltip region extending beneath the gate spacer and a bottom regionextending toward the semiconductor substrate portion in the first sigmaportion.

In some embodiments, the initial cavity has a sidewall verticallycoincident with an outer sidewall of the gate spacer.

In some embodiments, the first and second sigma portions have facetedsurfaces oriented along (111).

In some embodiments, the method further comprises: epitaxially growing asemiconductor buffer region in the trench, wherein the semiconductorbuffer region fills the second sigma portion, the middle portion and apart of the first sigma portion; and epitaxially growing a dopedsemiconductor region on the semiconductor buffer region, wherein thedoped semiconductor region fills an unfilled part of the first sigmaportion.

In some embodiments, the semiconductor buffer region fills thehorizontal tip region and the bottom region of the first sigma portion.

In some embodiments, the second sigma portion has a depth greater thanthat of the first sigma portion.

With the above-mentioned configurations of the semiconductor device andmethods for preparing the same, the volume of each source/drain cavityis increased, and more stress-generating material can be depositedtherein so as to create more stress on the channel regions of theFinFETs. As a result, the operating speed of the FinFETs can be greatlyenhanced.

The foregoing has outlined rather broadly the features and technicaladvantages of the present disclosure in order that the detaileddescription of the disclosure that follows may be better understood.Additional features and advantages of the disclosure will be describedhereinafter, and form the subject of the claims of the disclosure. Itshould be appreciated by those skilled in the art that the conceptionand specific embodiment disclosed may be readily utilized as a basis formodifying or designing other structures or processes for carrying outthe same purposes of the present disclosure. It should also be realizedby those skilled in the art that such equivalent constructions do notdepart from the spirit and scope of the disclosure as set forth in theappended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a flow chart showing a method for preparing a semiconductordevice according to an embodiment of the present disclosure.

FIG. 2 is a flow chart showing a method for preparing a semiconductordevice according to an embodiment of the present disclosure.

FIG. 3A is a cross-sectional view of an exemplary semiconductor deviceaccording to an embodiment of the present application that includes asemiconductor fin extending upwards from a semiconductor substrate and agate structure formed over the semiconductor fin, wherein thecross-sectional view is taken along a direction parallel to a lengthwisedirection of the semiconductor fin.

FIG. 3B is another cross-sectional view of the exemplary semiconductordevice of FIG. 3A taken along a direction perpendicular to thelengthwise direction of the semiconductor fin.

FIG. 4 is a cross-sectional view of the exemplary semiconductor deviceof FIG. 3A after forming initial cavities within the semiconductor finon opposites sides of the gate structures.

FIG. 5 is a cross-sectional view of the exemplary semiconductor deviceof FIG. 4 after forming oxide collars on sidewalls of the initialcavities.

FIG. 6 is a cross-sectional view of the exemplary semiconductor deviceof FIG. 5 after forming first and second sigma portions in the initialcavities.

FIG. 7 is a cross-sectional view of the exemplary semiconductor deviceof FIG. 6 after removing the oxide collars from the sidewalls of theinitial cavities.

FIG. 8 is a cross-sectional view of the exemplary semiconductor deviceof FIG. 7 after epitaxially growing a semiconductor buffer region on(111) faceted surfaces of each first sigma portion.

FIG. 9 is a cross-sectional view of the exemplary semiconductor deviceof FIG. 8 after forming a doped semiconductor region on eachsemiconductor buffer region.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1 is a flowchart showing a method 100 for preparing a semiconductordevice 3 in accordance with an embodiment of the present disclosure. Insome embodiments, the method 100 includes a number of steps (S102, S104,S106 and S108) and the description and illustrations below are notdeemed as a limitation to the sequence of the steps. In step S102, asemiconductor substrate 302 is provided as shown in FIGS. 3A to 3B. Instep S104, a trench 50′ is formed in the semiconductor substrate 302 asshown in FIG. 7. In some embodiments, the trench 50′ includes a firstsigma portion 502, a second sigma portion 506 and a middle portion 504connecting the first and second sigma portions. In step S106, asemiconductor buffer region 60 is epitaxially grown in the trench 50′.In some embodiments, the semiconductor buffer region 60 fills the secondsigma portion 506, the middle portion 504 and a part of the first sigmaportion 502 as shown in FIG. 8. In step S108, a doped semiconductorregion 80 is epitaxially grown on the semiconductor buffer region 60 asshown in FIG. 9. In some embodiments, the doped semiconductor region 80fills an unfilled part of the first sigma portion 502.

FIG. 2 is a flowchart showing a method 200 for preparing a semiconductordevice 3 in accordance with an embodiment of the present disclosure. Insome embodiments, the method 200 includes a number of steps (S202, S204,S206, S208 and S210) and the description and illustrations below are notdeemed as a limitation to the sequence of the steps. In step S202, asemiconductor substrate 302 is provided as shown in FIGS. 3A to 3B. Instep S204, an initial cavity 50 is formed by performing an anisotropicetch to remove a portion of a semiconductor fin 304 located on each sideof a gate structure 40 as shown in FIG. 4. In step S206, an oxide collar52 is formed on a middle portion of sidewalls of the initial cavity 50as shown in FIG. 5. In step S208, a crystallographic anisotropic etch isperformed to form a first sigma portion 502 above the oxide collar 52and a second sigma portion 506 below the oxide collar 52 as shown inFIG. 6. In step S210, the oxide collar 52 is removed from the middleportion of the sidewalls of the initial cavity 50 so as to obtain atrench 50′ including a first sigma portion 502, a second sigma portion506 and a middle portion 504 connecting the first sigma portion 502 andthe second sigma portion 506.

FIG. 3A is a cross-sectional view of an exemplary semiconductor deviceaccording to an embodiment of the present application that includes asemiconductor fin extending upwards from a semiconductor substrate and agate structure formed over the semiconductor fin. FIG. 3B is anothercross-sectional view of the exemplary semiconductor device of FIG. 3Ataken along a direction perpendicular to the lengthwise direction of thesemiconductor fin.

Referring to FIGS. 3A to 3B, the semiconductor device includes asemiconductor fin 304 extending upwards from a semiconductor substrate302 and a gate structure 40 formed over the semiconductor fin 304. Whileonly a single semiconductor fin 304 is shown, some embodiments mayinclude multiple semiconductor fins formed above the semiconductorsubstrate 302.

The exemplary semiconductor structure shown in FIGS. 3A to 3B can beformed by first providing a bulk semiconductor substrate (not shown). A“bulk semiconductor substrate” means a substrate that is entirelycomposed of at least one semiconductor material having semiconductingproperties. In the present application, at least an upper portion of thebulk semiconductor substrate is composed of a semiconductor materialincluding, for example, silicon (Si), germanium (Ge), a silicongermanium (SiGe) alloy, a carbon doped silicon (Si:C) alloy, III-Vcompound semiconductors or II-VI compound semiconductors. In oneembodiment, the semiconductor substrate is composed entirely of silicon.

The at least one semiconductor material that provides the bulksemiconductor substrate may be single crystalline, polycrystalline oramorphous. In one example, the entirety of, or at least the upperportion of, the bulk semiconductor substrate is composed of a singlecrystalline semiconductor material such as, for example, singlecrystalline silicon. In some embodiments, the thickness of thesemiconductor substrate can be between about 30 μm and about 2 mm,although lesser and greater thicknesses can also be employed.

After the bulk semiconductor substrate is provided, the bulksemiconductor substrate is patterned to provide a semiconductor fin 304.In the present application, the semiconductor fin 304 is formed withinthe upper portion of the bulk semiconductor substrate, while thesemiconductor substrate 302 represents a remaining lower portion of thebulk semiconductor substrate. A material interface 30 may or may notexist between the semiconductor fin 304 and the semiconductor substrate302. The semiconductor fin 304 may have a circular shape or arectangular shape. In one embodiment of the present application, thesemiconductor fin 304 has a width between 5 nm and 30 nm, althoughlesser and greater widths can also be employed. The height of thesemiconductor fin 304 can be between 30 nm and 200 nm, although lesserand greater heights can also be employed. If multiple fins are formed,each semiconductor fin 304 is spaced apart from its nearest neighboringsemiconductor fin 304 by a distance. In one embodiment, the distancebetween neighboring semiconductor fins 304 can be between 20 nm and 1000nm. The semiconductor fins 304 are oriented parallel to each other.

The semiconductor fin 304 can be formed by patterning the upper portionof the bulk semiconductor substrate. In one embodiment of the presentapplication, the patterning used to provide the semiconductor fin 304may include lithography and etching. Lithography includes forming aphotoresist layer (not shown) atop the semiconductor substrate. Thephotoresist layer may include a positive-tone photoresist material, anegative-tone photoresist material or a hybrid-tone photoresistmaterial. The photoresist layer may be formed by a deposition processsuch as, for example, spin coating. After the photoresist layer isformed, the photoresist layer is subjected to a patterned irradiation.Next, the exposed photoresist layer is developed utilizing aconventional resist developer. This provides a patterned photoresistlayer atop the semiconductor substrate to be patterned. The patternprovided by the patterned photoresist layer is thereafter transferredonto the underlying semiconductor substrate utilizing at least onepattern transfer etching process. Typically, the at least one patterntransfer etching process is an anisotropic etch. In one embodiment, adry etch such as, for example, a reactive ion etch (RIE) can be used. Inanother embodiment, a wet etch utilizing a chemical etchant can be used.In still a further embodiment, a combination of a thy etch and a wetetch can be used. In the illustrated embodiment, the etch stops within aportion of the bulk semiconductor substrate.

In another embodiment of the present application, the patterning used toprovide a semiconductor fin 304 may include a sidewall image transfer(SIT) process. The SIT process includes forming a mandrel material layer(not shown) atop the bulk semiconductor substrate to be patterned. Themandrel material layer can include any material (semiconductor,dielectric or conductive) that can be selectively removed from thestructure during a subsequently-performed etching process. In oneembodiment, the mandrel material layer may be composed of amorphoussilicon or polysilicon. In another embodiment, the mandrel materiallayer may be composed of a metal such as, for example, Al, W, or Cu. Themandrel material layer can be formed, for example, by chemical vapordeposition (CVD) or plasma-enhanced chemical vapor deposition (PECVD).In the following deposition of the mandrel material layer, the mandrelmaterial layer can be patterned by lithography and etching to form aplurality of mandrel structures (also not shown) on the topmost surfaceof the bulk semiconductor substrate.

The SIT process continues with forming of a spacer on each sidewall ofeach mandrel structure. The spacer can be formed by depositing a spacermaterial and then etching the deposited spacer material. The spacermaterial may comprise any material having an etch selectivity thatdiffers from that of the mandrel material. Examples of depositionprocesses that can be used in depositing the spacer material include,for example, CVD, PECVD or atomic layer deposition (ALD). Examples ofetching that be used in providing the spacers include any etchingprocess such as, for example, RIE.

After the formation of the spacers, the SIT process continues withremoval of each mandrel structure. Each mandrel structure can be removedby an etching process that is selective for removing the mandrelmaterial. Following the mandrel structure removal, the SIT processcontinues with transfer of the pattern. provided by the spacers onto theunderlying semiconductor substrate. The pattern transfer may be achievedby utilizing at least one etching process. Examples of etching processesthat can used to transfer the pattern may include dry etch (i.e., RIE,plasma etching, ion beam etching or laser ablation) and/or wet etch. Inone example, the etching process used to transfer the pattern mayinclude one or more RIE steps. Upon completion of the pattern transfer,the SIT process concludes with removal of the spacers from thestructure. The spacers may be removed by etching or a planarizationprocess.

After the semiconductor fin 304 is formed, a shallow trench isolation(STI) 308 is fanned to surround a base portion of the semiconductor fin304. The STI 308 may include a dielectric oxide such as, for example,silicon dioxide. The STI 308 may be formed by depositing a dielectricmaterial over the semiconductor substrate 302 and the semiconductor fin304 using a conventional deposition technique, such as, for example, CVDor PVD, planarizing the deposited dielectric material by a conventionalplanarization technique such as, for example, chemical mechanicalplanarization (CMP), and then etching back the deposited dielectricmaterial to the desired thickness. In some embodiments, theplanarization step may be omitted. An anisotropic etch such as, forexample, RIE may be employed to remove the dielectric material of theSTI 308 selective to the semiconductor material of the semiconductor fin304.

Still referring to FIGS. 3A to 3B, a gate structure 40 is formed overthe semiconductor fin 304. The gate structure 40 includes a gate stackstraddling a channel region 304′ (i.e., the active fin region) of thesemiconductor fin 304, and a gate spacer 408 present on sidewalls ofeach gate stack. The term “straddling” means that the gate stack is indirect contact with a top surface and two vertical sidewalls of thesemiconductor fin. The gate stack may include, from bottom to top, agate dielectric 406, a gate electrode 404 and a gate cap 402 and may beformed via any known process in the art, including a gate-first processand a gate-last process.

In a gate-first process, the gate stack (402, 404, 406) can be formed byproviding a material stack (not shown) that includes, from top tobottom, a gate cap layer, a gate electrode layer and a gate dielectriclayer over the semiconductor fin 304, the STI 308 and the semiconductorsubstrate portion 302, and lithographically patterning the materialstack.

The gate dielectric layer may include any suitable insulating materialincluding, but not limited to, oxides, nitrides or oxynitrides. In oneembodiment, the gate dielectric layer may include a high-k dielectrichaving a dielectric constant greater than that of silicon dioxide.Exemplary high-k dielectrics include, but are not limited to, HfO₂,ZrO₂, La₂O₃, Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃H_(f)O_(x)N_(y),ZrO_(x)N_(y), La₂O_(x)N_(y), Al₂O_(x)N_(y), TiOxNy, SrTiO_(x)N_(y),LaAlO_(x)N_(y), Y₂O_(x)N_(y), SiON, SiN_(x), silicates thereof, andalloys thereof. Each value of x is independently between 0.5 and 3 andeach value of y is independently between 0 and 2. In some embodiments, amultilayered gate dielectric structure comprising different gatedielectric materials, e.g., silicon dioxide, and a high-k dielectric,can be formed. The gate dielectric layer can be formed by any depositiontechnique including, for example, CVD, PECVD, PVD or atomic layerdeposition (ALD). Alternatively, the gate dielectric layer can be formedby a thermal growth process such as, for example, oxidation, nitridationor oxynitridation to convert surface portions of the semiconductor fin304 into a dielectric material. The gate dielectric layer that is formedcan have a thickness between 0.5 nm and 10 nm, with a thickness betweenabout 0.5 nm and about 3 nm being more typical.

The gate electrode layer may include any conductive material including,for example, doped polysilicon, an elemental metal such as W, Ti, Ta,Al, Ni, Ru, Pd and Pt, an alloy of at least two elemental metals, ametal nitride such as WN and TiN, a metal silicide such as WSi, NiSi,and TiSi, or multilayered combinations thereof. The gate electrode layercan be formed utilizing a deposition process including, for example,CVD, PECVD, PVD or ALD. In embodiments in which polysilicon or SiGe areused as the gate electrode material, an in-situ deposition process canbe used or, alternatively, deposition followed by ion implantation canbe used. The gate electrode layer that is formed can have a thicknessbetween 50 nm and 200 nm, although lesser or greater thicknesses canalso be employed.

The gate cap layer may include a dielectric oxide, a dielectric nitrideor a dielectric oxynitride. In one embodiment of the presentapplication, the gate cap layer includes silicon nitride. The gate caplayer can be formed by a deposition process including, for example, CVD,PECVD, PVD or ALD. The gate cap layer that is formed can have athickness between 25 nm and 100 nm, although lesser or greaterthicknesses can also be employed.

The lithographic patterning of the material stack can be performed by ananisotropic etch, which can be a dry etch such as, for example, RIE, ora wet etch. Each remaining portion of the gate dielectric layerconstitutes a gate dielectric 406, each remaining portion of the gateelectrode layer constitutes a gate electrode 404, and each remainingportion of the gate cap layer constitutes a gate cap 402.

In a gate-last process, the gate stack (402, 404, 406) may include asacrificial gate (not shown) that may be later removed and replaced by agate dielectric and a gate electrode such as those of the gate-firstprocess described above. In an exemplary embodiment, the sacrificialgate may be made of polysilicon with a sacrificial dielectric material(e.g., silicon dioxide) formed using deposition techniques known in theart including, for example, ALD, CVD and PVD.

Each gate spacer 408 may include a dielectric material such as, forexample, an oxide, a nitride, an oxynitride, or any combination thereofIn one embodiment, each gate spacer 408 is composed of silicon nitride.The gate spacers 408 can be formed by first providing a conformal gatespacer material layer (not shown) on exposed surfaces of the gate stacks(402, 404, 406), the semiconductor fin 304, the STI 308 and thesemiconductor substrate 302 and then etching the gate spacer materiallayer to remove horizontal portions of the gate spacer material layer.The gate spacer material layer can be provided by a deposition processincluding, for example, CVD, PECVD or ALD. The etching of the gatespacer material layer may be performed by a dry etch process such as,for example, RIE. The remaining vertical portions of the gate spacermaterial layer constitute the gate spacers 408. The width of each gatespacer 408, as measured at the base of the gate spacer 408 can bebetween 5 nm and 100 nm, although lesser and greater widths can also beemployed.

FIG. 4 illustrates an exemplary semiconductor structure of FIG. 3A afterinitial cavities 50 are formed within the semiconductor fin 304 onopposites sides of the gate structures 40. The initial cavities 50 mayhave a rectangular shape with substantially vertical sidewalls. Thesidewalls of the initial cavities 50 are vertically coincident with(i.e., vertically aligned to) outer sidewalls of the gate spacers 408.The initial cavities 50 may be formed by performing an anisotropic etchthat removes portions of the semiconductor fin 304 that are not coveredby the gate structures 40. In one embodiment, an RIE process using, forexample, chlorine, may be performed. In some embodiments, the initialcavities 50 may have a depth of about 5 nm to 10 nm, although lesser andgreater depths can also be employed.

FIG. 5 illustrates the exemplary semiconductor structure of FIG. 4 afterforming of oxide collars 52 on a middle portion of sidewalls of theinitial cavities 50 by performing an annealing process. The annealingprocess is performed in an oxygen-containing environment to selectivelyoxidize the middle portion of sidewalls of the initial cavities 50 toform the oxide collar 52. Annealing is preferably performed at atemperature between about 900° C. and 1150° C., and more preferably atabout 1050° C.

FIG. 6 illustrates the exemplary semiconductor structure of FIG. 5 afterfirst sigma portions 502 and second sigma portions 506 are formed in theinitial cavities 50 by performing a crystallographic anisotropic etch.The crystallographic anisotropic etch is also referred to as a sigmacavity etch. In some embodiments, the sigma cavity etch may comprise awet etch using, for example, tetramethylammonium hydroxide (TMAH),ammonium hydroxide, and/or potassium hydroxide as an etchant. Theetchant etches (001) and (110) crystallographic planes faster than (111)crystallographic planes, forming first sigma cavities 32 with facetedsurfaces oriented along (111) planes (herein referred to as (111)faceted surfaces). The first sigma portion 502 contains a firsthorizontal tip region 503 protruding in a lateral direction toward anadjacent channel region 304′ and extending beneath the gate spacer 408.The first horizontal tip region 503 comprises an intersection of twofaceted surfaces. In some embodiments, the second sigma portion 506 hasa depth greater than that of the first sigma portion 502. The secondsigma portion 506 also contains a second horizontal tip region 505protruding in a lateral direction toward an adjacent channel region 304′and extending beneath the gate spacer 408. In some embodiments, thesecond horizontal tip region 505 protrudes farther than the firsthorizontal tip region 503.

FIG. 7 illustrates the exemplary semiconductor structure of FIG. 6 afterthe oxide collar 52 is removed from the middle portion of sidewalls ofthe initial cavities 50 so as to obtain a trench 50′. The trench 50′includes a middle portion 504 connecting the first sigma portion 502 andthe second sigma portion 506.

FIG. 8 illustrates the exemplary semiconductor structure of FIG. 7 aftera semiconductor buffer region 60 is epitaxially grown on (111) facetedsurfaces of the first sigma portion 502. The terms “epitaxial growthand/or deposition” and “epitaxially formed and/or grown” mean the growthof a semiconductor material on a deposition surface of a semiconductormaterial, in which the semiconductor material being grown may have thesame crystalline characteristics as the semiconductor material of thedeposition surface. In an epitaxial deposition process, the chemicalreactants provided by the source gases are controlled and the systemparameters are set so that the depositing atoms arrive at the depositionsurface of the semiconductor substrate with sufficient energy to movearound on the surface and orient themselves to the crystal arrangementof the atoms of the deposition surface. Therefore, an epitaxialsemiconductor material may have the same crystalline characteristics asthe deposition surface on which it may be formed. For example, anepitaxial semiconductor material deposited on a (111) crystal surfacemay take on a (111) orientation. In some embodiments, epitaxial growthand/or deposition processes may be selective to forming on semiconductorsurfaces, and may not deposit material on dielectric surfaces, such assilicon dioxide or silicon nitride surfaces.

The semiconductor buffer regions 60 may include an intrinsic (i.e.,un-doped) semiconductor material that has a greater or smaller latticeconstant than that of the semiconductor material that provides thesemiconductor fin 304, and thus the semiconductor buffer regions 60introduce stress to the channel regions 304′ of the semiconductor fin304. If the lattice constant of the semiconductor material that providesthe semiconductor buffer regions 60 is greater than the lattice constantof the semiconductor material that provides the semiconductor fin 304, acompressive stress can be applied to the channel regions 304′. If thelattice constant of the semiconductor material that provides thesemiconductor buffer regions 60 is less than the lattice constant of thesemiconductor material that provides the semiconductor fin 304, atensile stress can be applied to the channel regions 304′. For example,in instances where the semiconductor fin 304 is composed of silicon, forp-type FinFETs, the semiconductor buffer regions 60 may include a SiGealloy containing, for example, about 10-80 atomic % of germanium toinduce a compressive stress toward the channel regions 304′, while forn-type FinFETs, the semiconductor buffer regions 60 may include a Si:Calloy containing, for example, about 0.4-3.0 atomic % of carbon toinduce a tensile stress toward the channel regions 304′.

The semiconductor buffer regions 60 may be formed by a first selectiveepitaxial growth process. The first selective epitaxial growth processdeposits the semiconductor material that provides the semiconductorbuffer regions 60 only on the semiconductor surfaces (i.e., (111)faceted surfaces), but not on dielectric surfaces, such as gate caps402, gate spacers 408 and STI 308. In one embodiment, the semiconductorbuffer regions 60 are formed, for example, by CVD, molecular beamepitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), or othersuitable processes.

Due to the fact that the epitaxial growth rate on (111) planes isconsiderably less than that on (110) and (100) planes (with (100) beingthe fastest), the deposited semiconductor material grows faster at thefirst horizontal tip region 503, the middle portion 504 and the secondsigma portion 506 than at sidewall regions having (111) facetedsurfaces. The selective epitaxial growth process can proceed such thatthe horizontal tip region 503 and the middle portion 504 and the secondsigma portion 506 are completely filled by the semiconductor bufferregion 60, and a remaining unfilled portion of the first sigma portion502 has a box shape with substantially vertical sidewalls. Because thegrowth at the middle portion 504 and the second sigma portion 506 is thefastest, a horizontal portion of each semiconductor buffer region 60 hasa thickness greater than a thickness of the vertical portion. At thispoint of the method and as shown in FIG. 8, a part of the first sigmaportion 502 remains unfilled after formation of the semiconductor bufferregions 60.

FIG. 9 illustrates the first exemplary semiconductor structure of FIG. 8after a doped semiconductor region 80 is formed on each semiconductorbuffer region 60 to completely fill the remaining unfilled portion ofthe first sigma portion 502. As a result, a filled trench 50″ includinga first sigma portion 502′, a second sigma portion 506′ and a middleportion 504 is obtained. As can be seen, the first sigma portion 502′,the second sigma portion 506′ and the middle portion 504′ correspond tothe first sigma portion 502, the second sigma portion 506 and the middleportion 504 after being filled by the semiconductor buffer region 60and/or the doped semiconductor region. Each doped semiconductor region80 and an underlying semiconductor buffer region 60 constitute asource/drain structure. The doped semiconductor regions 80 may include asemiconductor material that can induce the same type of stress to thechannel regions 304′ of the semiconductor fin 304 as the underlyingsemiconductor buffer regions 60. In one embodiment, the dopedsemiconductor regions 80 may be comprised of the same semiconductormaterial as the semiconductor buffer regions 60. The doped semiconductorregions 80 also include p-type or n-type dopants. The term “p-type”refers to the addition of impurities to an intrinsic semiconductor thatcreates deficiencies of valence electrons. Examples of p-type dopants,i.e., impurities, include, but are not limited to, boron, aluminum,gallium, and indium. “N-type” refers to the addition of impurities thatcontributes free electrons to an intrinsic semiconductor. Examples ofn-type dopants, i.e., impurities, include, but are not limited to,antimony, arsenic, and phosphorous. In one embodiment, for p-typeFinFETs, the doped semiconductor regions 80 may be composed of borondoped SiGe, while for n-type FinFETs, the doped source/drain regions 80may be composed of phosphorous doped Si:C. The dopant centration of thedoped semiconductor regions 80 can be between 1.0×10²⁰ atoms/cm³ and3.0×10²¹ atoms/cm³, although lesser and greater atomic concentrationscan also be employed.

The doped semiconductor regions 80 may be formed by a second selectiveepitaxial growth process. The second selective epitaxial growth processdeposits a doped semiconductor material by in-situ doping, and is hereinreferred to as an in-situ doped selective epitaxial growth process.

After the doped semiconductor regions 80 are provided, the dopants inthe doped semiconductor regions 80 may be activated by a thermalannealing. Thermal annealing can be performed by a rapid thermal annealprocess, a laser anneal process or a furnace anneal process. During theannealing process, the dopants contained within the doped semiconductorregions 80 diffuse into the semiconductor buffer regions 60 and thesemiconductor fin 304, thereby forming source/drain junctions betweenthe doped semiconductor regions 80 and the channel regions 304′. In thepresent application, since the doped semiconductor regions 80 havesubstantially vertical sidewalls, after annealing, uniform source/drainjunctions along the fin height direction are formed between the channelregions 304′ and the doped semiconductor regions 80. The undesirablegate length variation encountered in the prior art can thus be resolved.

With the above-mentioned configurations of the semiconductor device andmethods for preparing the same, the volume of each source/drain cavityis increased, and more stress-generating material can be depositedtherein so as to create more stress on the channel regions of theFinFETs. As a result, operating speed of the FinFETs can be greatlyenhanced.

One aspect of the present invention provides a semiconductor deviceincluding a semiconductor substrate, a semiconductor fin and a filledtrench. The semiconductor fin extends upwards from the semiconductorsubstrate. The filled trench is formed in the semiconductor fin andincludes a first sigma portion, a second sigma portion and a middleportion. The first sigma portion is partially filled by a semiconductorbuffer region, and an unfilled part of the first sigma portion is filledby a doped semiconductor region grown on the semiconductor bufferregion. The second sigma portion is filled by the semiconductor bufferregion. The middle portion connects the first sigma portion to thesecond sigma portion, and the middle portion is filled by thesemiconductor buffer region.

Another aspect of the present invention provides a method for preparinga semiconductor device. The method includes steps of providing asemiconductor substrate; forming a trench in the semiconductorsubstrate, wherein the trench includes a first sigma portion, a secondsigma portion and a middle portion connecting the first and second sigmaportions; epitaxially growing a semiconductor buffer region in thetrench, wherein the semiconductor buffer region fills the second sigmaportion, the middle portion and a part of the first sigma portion; andepitaxially growing a doped semiconductor region on the semiconductorbuffer region, wherein the doped semiconductor region fills an unfilledpart of the first sigma portion.

Another aspect of the present invention provides a method for preparinga semiconductor device. The method includes steps of providing asemiconductor substrate; forming an initial cavity by performing ananisotropic etch to remove a portion of a semiconductor fin located oneach side of a gate structure; forming an oxide collar on a middleportion of sidewalls of the initial cavity; performing acrystallographic anisotropic etch to form a first sigma portion abovethe oxide collar and a second sigma portion below the oxide collar; andremoving the oxide collar from the middle portion of the sidewalls ofthe initial cavity so as to obtain a trench including a first sigmaportion, a second sigma portion and a middle portion connecting thefirst sigma portion and the second sigma portion.

Although the present disclosure and its advantages have been describedin detail, it should be understood that various changes, substitutionsand alterations can be made herein without departing from the spirit andscope of the disclosure as defined by the appended claims. For example,many of the processes discussed above can be implemented in differentmethodologies and replaced by other processes, or a combination thereof.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will. readilyappreciate from the disclosure of the present disclosure, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present disclosure. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, and steps.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor substrate; a semiconductor fin extending upwards from thesemiconductor substrate; and a filled trench formed in the semiconductorfin, wherein the filled trench includes: a first sigma portion partiallyfilled by a semiconductor buffer region, wherein an unfilled part of thefirst sigma portion is to filled by a doped semiconductor region grownon the semiconductor buffer region; a second sigma portion filled by thesemiconductor buffer region; and a middle portion connecting the firstsigma portion to the is second sigma portion, wherein the middle portionis filled by the semiconductor buffer region.
 2. The semiconductordevice of claim 1, further comprising a gate structure formed over thesemiconductor fin, wherein the gate structure includes a gate stackstraddling a channel portion of the semiconductor fin and a gate spacerpresent on sidewalls of the gate stack.
 3. The semiconductor device ofclaim 2, wherein the first sigma portion includes a horizontal tipregion extending beneath the gate spacer and a bottom region extendingtoward the semiconductor substrate.
 4. The semiconductor device of claim3, wherein the semiconductor buffer region fills the horizontal tipregion and the bottom region or the first sigma portion.
 5. Thesemiconductor device of claim 2, wherein the filled trench has sidewallsvertically coincident with outer sidewalls of the gate spacer.
 6. Thesemiconductor device of claim 1, wherein the second sigma portion has adepth greater than that of the first sigma portion.
 7. A method forpreparing a semiconductor device, comprising: providing a semiconductorsubstrate; forming a trench in the semiconductor substrate, wherein thetrench includes a first sigma portion, a second sigma portion and amiddle portion connecting the first and second sigma portions;epitaxially growing a semiconductor buffer region in the trench, whereinthe semiconductor buffer region fills the second sigma portion, themiddle portion and a part of the first sigma portion; and epitaxiallygrowing a doped semiconductor region on the semiconductor buffer region,wherein the doped semiconductor region fills an unfilled part of thefirst sigma portion.
 8. The method of claim 7, further comprising:forming a gate structure over a semiconductor fin that extends upwardsfrom the semiconductor substrate, wherein the gate structure comprises agate stack straddling a channel portion of the semiconductor fin and agate spacer present on sidewalls of the gate stack; and forming ahorizontal tip region extending beneath the gate spacer and a bottomregion extending toward the semiconductor substrate portion in the firstsigma portion.
 9. The method of claim 8, wherein forming the trenchfurther comprises: forming an initial cavity by performing ananisotropic etch to remove a portion of the semiconductor fin located oneach side of the gate structure, wherein the initial cavity has asidewall vertically coincident with an outer sidewall of the gatespacer; and forming an oxide collar on a middle portion of sidewalls ofthe initial cavity.
 10. The method of claim 8, wherein forming thetrench further comprises performing a crystallographic anisotropic etchto form the first sigma portion above the oxide collar and the secondsigma portion below the oxide collar, wherein the first and second sigmaportions have faceted surfaces oriented along (111).
 11. The method ofclaim 10, wherein forming the trench further comprises removing theoxide collar from the middle portion of the sidewalls of the initialcavity, such that the middle portion of the trench connects the firstsigma portion and the second sigma portion.
 12. The method of claim 10,wherein the crystallographic anisotropic etch uses etchant including atleast one of tetramethylammonium hydroxide (TMAH), ammonium hydroxideand potassium hydroxide.
 13. The method of claim 12, wherein the etchantetches (001) and (110) crystallographic planes faster than (111)crystallographic planes.
 14. A method for preparing a semiconductordevice, comprising: providing a semiconductor substrate; forming aninitial cavity by performing an anisotropic etch to remove a portion ofa semiconductor fin located on each side of a gate structure; forming anoxide collar on a middle portion of sidewalls of the initial cavity;performing a crystallographic anisotropic etch to form a first sigmaportion above the oxide collar and a second sigma portion below theoxide collar; and removing the oxide collar from the middle portion ofthe sidewalls of the initial cavity so as to obtain a trench including afirst sigma portion, a second sigma portion and a middle portionconnecting the first sigma portion and the second sigma portion.
 15. Themethod of claim 14, further comprising: forming a gate structure over asemiconductor fin that extends upwards from the semiconductor substrate,wherein the gate structure comprises a gate stack straddling a channelportion of the semiconductor fin and a gate spacer present on sidewallsof the gate stack; and forming a horizontal tip region extending beneaththe gate spacer and a bottom region extending toward the semiconductorsubstrate portion in the first sigma portion.
 16. The method of claim15, wherein the initial cavity has a sidewall vertically coincident withan outer sidewall of the gate spacer.
 17. The method of claim 16,wherein the first and second sigma portions have faceted surfacesoriented along (111).
 18. The method of claim 15, further comprising:epitaxially growing a semiconductor buffer region in the trench, whereinthe semiconductor buffer region fills the second sigma portion, themiddle portion and a part of the first sigma portion; and epitaxiallygrowing a doped semiconductor region on the semiconductor buffer region,wherein the doped semiconductor region fills an unfilled part of thefirst sigma portion.
 19. The method of claim 18, wherein thesemiconductor buffer region fills the horizontal tip region and thebottom region of the first sigma portion.
 20. The method of claim 19,wherein the second sigma portion has a depth greater than that of thefirst sigma portion.